Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

NXP Semiconductors is supplying a family of isolated gate-driver ICs to control the silicon-carbide (SiC) power switches at the heart of ZF Friedrichshafen’s next-gen electric-vehicle (EV) traction ...

Change never comes easy in the world of power electronics. To achieve higher power densities, the latest 3.3 kW switched-mode power supplies (SMPS) are adopting silicon-carbide (SiC) power MOSFETs in ...

Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed ...

Microchip is introducing its 600V Gate Driver portfolio, featuring 12 devices for the protection of discrete MOSFETs and IGBTs. They are available in half-bridge, high-side/low-side and 3-phase driver ...

Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

Let’s continue our journey into power electronics components that are employed as switches in the switching regime while using some SPICE simulations to observe their general behavior. The switching ...