Abstract: A quasi-vertical Schottky diodes with high speed and high responsivity were demonstrated by epitaxially growing Ga 2O 3on Pt. The research further investigated the impact of incorporating ...
Abstract: This article presents a temperature sensor based on a partial p-GaN cap layer and a semicircular T-anode AlGaN/gallium nitride (GaN) Schottky barrier diode (PCT-SBD). The PCT-SBD uses a ...
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