bDivision of Tuberculosis Elimination, National Center for HIV, Viral Hepatitis, STD, and TB Prevention, US Centers for Disease Control and Prevention, Atlanta, GA, USA cOffice of Public Health Impact ...
Abstract: The single event burn-out (SEB) performances of p-GaN gate high electron mobility transistors (HEMTs) were investigated in this article, considering different buffer electron mobilities and ...
Abstract: A novel comb-like-channel field-effect transistor (CombFET), which is the combination of the fin field-effect transistor (FinFET) and nanosheet FET (NshFET) geometries in the channel region, ...
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