Abstract: The p+–n–n−–n+ structure, known as Hi–Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve ...
Abstract: Positive - intrinsic - Negative (PIN) photodiodes have been widely studied in recent times for detecting and measuring different types of ionizing radiations owing to their superior ...
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