Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
A typical driver for thermoelectric (TE) cooler applications may use pulse width modulation (PWM) to drive an H-bridge circuit. This scheme works but drives the TE device with very large current ...
Morning Overview on MSN
IBM packed 100 billion transistors onto one chip, promising big speed gains and far less power
IBM has pushed transistor density to a new extreme, fitting nearly 100 billion transistors onto a single chip roughly the ...
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