Distributed polarisation doping produces record forward currents in quasi-vertical AlGaN Schottky barrier diodes Engineers from the University of South Carolina are claiming to have broken the record ...
Abstract: Commercial silicon carbide (SiC) Schottky diodes are predominantly realized in junction barrier Schottky (JBS) and merged p-type–intrinsic–n-type (PiN) Schottky (MPS) configurations, while ...
There is a near-endless number of resources to find in Marathon, and knowing where the real value lies is a trick in and of itself. In this guide, I'll show you where to go to find the all-important ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) introduces the AL3069Q, an automotive-compliant* high-efficiency 60V boost controller for backlight applications. The device includes four ...
Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the AL3069Q, an automotive-compliant* high-efficiency 60V boost controller for backlight applications. The device includes four 80V ...
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been ...
Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...
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